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Umeda, Takahide*; Okamoto, Mitsuo*; Arai, Ryo*; Sato, Yoshihiro*; Kosugi, Ryoji*; Harada, Shinsuke*; Okumura, Hajime*; Makino, Takahiro; Oshima, Takeshi
Materials Science Forum, 778-780, p.414 - 417, 2014/02
Times Cited Count：2 Percentile：72.7(Crystallography)Interface defects of Metal-Oxide-Semiconductors (MOSFETs) fabricated on Carbone (C) face 4H-SiC were investigated by Electrically Detected Magnet Resistance (EDMR). Gate oxide of the MOSFETs was formed by either wet-oxidation and H
annealing or dry-oxidation. The values of channel mobility for MOSFETS with wet gate oxide and dry gate oxide are less than 1 and 90 cm
/Vs, respectively. By EDMR measurement under low temperature (less than 20 K), EDMR signals related to C were detected. The peak height of the signals increased with increasing 
-ray doses, and the channel mobility decreased. From this result, it is assumed that hydrogen atoms passivating C dangling bonds are released by -rays and the channel mobility decreases with increasing the C related defects.
-ray dose rate monitoringFujita, Natsuko; Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi
Materials Science Forum, 778-780, p.1042 - 1045, 2014/02
Times Cited Count：1 Percentile：53.76(Crystallography)A Silicon Carbide (SiC) dosimeter has been exposed to -rays emitted from a 
Co source in order to test the response of radiation-induced current in the dose rate ranging from 0.4 Gy/h to 4 kGy/h. The SiC dosimeter in this study is a high purity semi-insulating 4H-SiC with nickel and aluminum electrode. The radiation-induced currents in the dosimeter show a linear relationship with the dose rate, and are repeatable and stable.
Deki, Manato*; Oka, Tomoki*; Takayoshi, Shodai*; Naoi, Yoshiki*; Makino, Takahiro; Oshima, Takeshi; Tomita, Takuro*
Materials Science Forum, 778-780, p.661 - 664, 2014/02
Times Cited Count：2 Percentile：72.7(Crystallography)no abstracts in English
Iwamoto, Naoya; Onoda, Shinobu; Fujita, Natsuko; Makino, Takahiro; Oshima, Takeshi
Materials Science Forum, 778-780, p.289 - 292, 2014/02
Times Cited Count：0 Percentile：0.32(Crystallography)Deki, Manato*; Makino, Takahiro; Kojima, Kazutoshi*; Tomita, Takuro*; Oshima, Takeshi
Materials Science Forum, 778-780, p.440 - 443, 2014/02
Times Cited Count：3 Percentile：82.26(Crystallography)no abstracts in English
C and 1500C and measurements of lifetime and photoluminescenceKlahold, W. M.*; Devaty, R. P.*; Choyke, W. J.*; Kawahara, Kotaro*; Kimoto, Tsunenobu*; Oshima, Takeshi
Materials Science Forum, 778-780, p.273 - 276, 2014/02
Miyake, Keiko*; Yasuda, Tomonari*; Kato, Masashi*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi
Materials Science Forum, 778-780, p.503 - 506, 2014/02
Nakane, Hiroki*; Kato, Masashi*; Ichimura, Masaya*; Oshima, Takeshi
Materials Science Forum, 778-780, p.277 - 280, 2014/02
Son, N. T.*; Trinh, X. T.*; Suda, Jun*; Kimoto, Tsunenobu*; L
vile, L. S.*; Svensson, B. G.*; Szasz, K.*; Hornos, T.*; Gali, A.*; Umeda, Takahide*; et al.
no journal, ,
no abstracts in English
